| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
FQP10N20C • • • • • • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! |
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Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features • –3.3 A, –20V RDS(ON) = 125 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -24A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G TO-3P G DS FQA Series |
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Fairchild Semiconductor |
VHF/UHF transistor rrent Gain Bandwidth Product Output Capacitance Collector Base Feedback Capacitance Collector Base Time Constant Test Condition IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=2V, IC=0 VCE=10V, IC=4mA IC=4mA, IB=0.4mA VCE=10V, IC=4mA VCE= |
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Fairchild Semiconductor |
P-Channel Switch age Current Drain-Gate Leakage Current Zero-Gate Voltage Drain Current Gate-Source Cutoff Voltage Drain-Source On Voltage Drain-Source On Resistance Drain-Source On Resistance Input Capacitance Reverse Transfer Capacitance Trun On Time Rise Time Trun |
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Fairchild Semiconductor |
P-Channel Switch age Current Drain-Gate Leakage Current Zero-Gate Voltage Drain Current Gate-Source Cutoff Voltage Drain-Source On Voltage Drain-Source On Resistance Drain-Source On Resistance Input Capacitance Reverse Transfer Capacitance Trun On Time Rise Time Trun |
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Fairchild Semiconductor |
Integrated P-Channel MOSFET and Schottky Diode a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features • • –3.3 A, –20 V. RDS(ON) = 0.125 Ω @ VGS = –10 V RDS(ON) = 0 |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -13.2A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G GD S TO-220F FQPF S |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A • Low Gate Charge ( Typ. 18nC) • Low Crss ( Typ. 10pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant January 2009 UniFETTM Description These N-Channel enhanceme |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Darlington Transistor |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 96 mΩ • Ultra Low Gate Charge (Typ. Qg = 63 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Po |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -18A, -100V, RDS(on) = 0.19Ω @VGS = -10 V Low gate charge ( typical 30 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G TO-3P G DS FQA Series |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -16.5A, -100V, RDS(on) = 0.19Ω @VGS = -10 V Low gate charge ( typical 30 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQB Se |
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Fairchild Semiconductor |
200V N-Channel MOSFET * 1,)263 1,'((63 7 )(( '( .8( ±-( * % % % * < % < *$ ? ?$6 6 6 9 * 7 |
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Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET * 1,)263 1,'((63 7 )(( '( .8( ±-( * % % % * < % < *$ ? ?$6 6 6 9 * 7 |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 18 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol P |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G G DS TO-220 FQP Serie |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D G S D-PAK FQD Series I-PAK G D S FQU Series G S Absolute Max |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Darlington Transistor |
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Fairchild Semiconductor |
N-Channel MOSFET • 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode TM Description These N-Channel enhancement mode po |
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