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FQA17P10 |
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| Part Number | FQA17P10 |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • • -18A, -100V, RDS(on) = 0.19Ω @VGS = -10 V Low gate charge ( typical 30 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G TO-3P G DS FQA Series TC = 25°C unless otherwise noted S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA17P10 -100 -18 -12.7 -72 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W ... |
| Document |
 FQA17P10 Data Sheet
PDF 676.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQA170N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 2 | FQA17N40 |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 4 | FQA10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 5 | FQA10N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|