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FQPF22P10 |
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| Part Number | FQPF22P10 |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • • -13.2A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G GD S TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF22P10 -100 -13.2 -9.3 -52.8 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A... |
| Document |
 FQPF22P10 Data Sheet
PDF 625.70KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | FQPF22N30 |
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| 2 | FQPF22N50 |
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| 4 | FQPF20N06L |
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|