| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
FDS4435BZ Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV typical (note 3) High performance trench technology for extrem |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surfac |
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Fairchild Semiconductor |
N-Channel MOSFET 12.5 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.013 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge. High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 Su |
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Fairchild Semiconductor |
N-Channel MOSFET • 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V. • • • • Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Appl |
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Fairchild Semiconductor |
40V N-Channel MOSFET • 10.8 A, 40 V. RDS(ON) = 10.5 mΩ @ VGS = 10 V • Low gate charge (30 nC) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter D D SO-8 D D DD D D 5 6 7 4 3 2 |
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Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET • 16 A, 30 V. RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.5 V • Ultra-low gate charge (40 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converte |
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Fairchild Semiconductor |
30 Volt P-Channel PowerTrench MOSFET • –13 A, –30 V. RDS(ON) = 9 mΩ @ VGS = –10 V RDS(ON) = 13 mΩ @ VGS = – 4.5 V • Extended VGSS range (±25V) for battery applications • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D D S |
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Fairchild Semiconductor |
Dual N-Channel MOSFET 3.5 A, 30 V. RDS(ON) = 0.090 Ω @ VGS = 10 V RDS(ON) = 0.140 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. These N-Cha |
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Fairchild Semiconductor |
P-Channel MOSFET • –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V • Low gate charge (17nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD |
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Fairchild Semiconductor |
N-Channel MOSFET se (Note 1a) 40 0.5 °C/W Package Marking and Ordering Information Device Marking FDS6064N3 Device FDS6064N3 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2002 Fairchild Semiconductor Corporation FDS6064N3 Rev B2 (W) FDS6064N3 Electrical |
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Fairchild Semiconductor |
Dual N-Channel MOSFET • 7.5 A, 20 V. RDS(ON) = 0.018 Ω • • @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Appli |
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Fairchild Semiconductor |
P-Channel PowerTrench MOSFET Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV typical (note 3) High performance trench technology for extrem |
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Fairchild Semiconductor |
N-Channel MOSFET • 23 A, 20 V. RDS(ON) RDS(ON) RDS(ON) = 3.5 mΩ @ VGS = 4.5 V = 4 mΩ @ VGS = 2.5 V = 6 mΩ @ VGS = 1.8 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching, low gate charge • FL |
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Fairchild Semiconductor |
Dual-Channel MOSFET N-Channel 5.5 A,30 V, RDS(ON)=0.030 Ω @ VGS=4.5 V RDS(ON)=0.038 Ω @ VGS=2.5 V. P-Channel -4 A,-20 V, RDS(ON)=0.055 Ω @ VGS=-4.5 V RDS(ON)=0.072 Ω @ VGS=-2.5 V. High density cell design for extremely low RDS(ON). High power and current handling capabi |
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Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET • -3.8 A, -20 V. RDS(on) = 0.075 Ω • • Low gate charge ( 7nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(on). High power and current handling capability. @ VGS = -4.5 V RDS(on) = 0.105 Ω @ VGS = -2.5 V. |
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Fairchild Semiconductor |
N-Channel MOSFET • 14.5 A, 30 V. RDS(ON) typ 5.25 mΩ @ VGS = 10 V RDS(ON) typ 6.00 mΩ @ VGS = 4.5 V • • • Includes SyncFET Schottky body diode Low gate charge (43nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power |
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Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET • 15 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications • Synchronous Rectifier • DC/DC converter D D D D 5 6 4 3 2 1 SO-8 S S S G |
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Fairchild Semiconductor |
MOSFET rDS(on) = 13 mΩ @ VGS = 10 V rDS(on) = 17 mΩ @ VGS = 4.5 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A High power and handing capabil |
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Fairchild Semiconductor |
N-Channel MOSFET • 10.8 A, 40 V. RDS(ON) = 12 mΩ @ VGS = 10 V • Low gate charge (29 nC) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter D D D D SO-8 DD D D 5 6 7 4 3 2 1 |
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