| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Quad Buffer s High impedance base inputs for reduced loading Ordering Code: Order Number 74F125SC 74F125SJ 74F125PC Package Number M14A M14D N14A Package Description 14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150 Narrow 14-Lead Small Outli |
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Fairchild Semiconductor |
Slew-Rate-Controlled Load Switch 1.2 V to 5.5 V Input Voltage Operating Range Typical RON: 45 mΩ at VIN=5.5 V 55 mΩ at VIN=3.3 V 90 mΩ at VIN=1.8 V 185 mΩ at VIN=1.2 V Slew Rate Control with tR: FPF1203/FPF1203l/FPF1204: 100 µs FPF12045: 2 µs Output Discharge Fun |
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Fairchild Semiconductor |
FDPF12N50FT • RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field eff |
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Fairchild Semiconductor |
Slew-Rate-Controlled Load Switch 1.2 V to 5.5 V Input Voltage Operating Range Typical RON: 45 mΩ at VIN=5.5 V 55 mΩ at VIN=3.3 V 90 mΩ at VIN=1.8 V 185 mΩ at VIN=1.2 V Slew Rate Control with tR: FPF1203/FPF1203l/FPF1204: 100 µs FPF12045: 2 µs Output Discharge Fun |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild Semiconductor |
IntelliMAX Advanced Load Switch 1.2V to 4.0V Input Voltage Operating Range Typical RON: 50mΩ at VIN=3.3V 77mΩ at VIN=1.8V 150mΩ at VIN=1.2V Slew Rate Control with tR: 110µs Output Discharge Function on FPF1208 Low <1.5µA Quiescent Current Extra Low <100nA Off Supp |
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Fairchild Semiconductor |
N-Channel Logic Level Power MOSFET • 12A, 100V • rDS(ON) = 0.200Ω • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Tra |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 22nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A • Low Gate Charge (Typ. 23 nC ) • Low Crss (Typ. 14 pF ) • 100% Avalanche Tested • ESD Improved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply D |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 22 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply November 2013 Description UniFET |
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Fairchild Semiconductor |
Application Explanation 125 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristic Symbol Rth(J-C) Pa |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 7.8A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capabilit D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Rating |
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Fairchild Semiconductor |
200V P-Channel MOSFET • • • • • • -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! ▶ ▲ ● G D S TO-3PF FQAF Series ! D Absolute Maximum R |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild Semiconductor |
Ultrafast Recovery Power Rectifier • Ultrafast with Soft Recovery : < 35ns (@IF = 6A) • High Reverse Voltage : VRRM = 200V • Enhanced Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply • Free-wheeling Diode • Power Switching Ci |
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Fairchild Semiconductor |
N-Channel MOSFET N-Channel UniFETTM Ultra FRFETTM MOSFET Description UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better sw |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 530 m (Typ.) @ VGS = 10 V, ID = 6 A • Low Gate Charge ( Typ. 26 nC) • Low Crss ( Typ. 12 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Description UniFETTM II MOSFET is Fairchild Semi |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 21 pF) • 100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID |
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