| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
N-Channel MOSFET • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description May 2006 TM These N-Channel enhancement mode power |
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Fairchild Semiconductor |
FDB33N25 • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect trans |
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Fairchild Semiconductor |
150mW Bi-directional Trigger Diodes • VBO : 32V Version • Low break-over current • DO-35 package (JEDEC) • Hermetically sealed glass • Compression bonded construction • All external surfaces are corrosion resistant and terminals are readily solderable • RoHS compliant • High reliabilit |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82784 Applications • |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on |
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Fairchild Semiconductor |
N-Channel MOSFET • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly |
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Fairchild Semiconductor |
N-Channel MOSFET •R DS(on) = N-Channel UniFETTM Ultra FRFETTM MOSFET 300 V, 38 A, 120 mΩ Description UniFETTM MOSFET is Fairchild Semicondu ctor’s hig h voltage MOSFET family based on planar stripe and DMOS techn ology. This MOSFET is tailored to r educe on-state r |
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Fairchild Semiconductor |
N-Channel MOSFET Applications • rDS(on) = 14 mΩ ( Typ.), VGS = 10 V, ID = 61 A • Qg(tot) = 41 nC ( Typ.), VGS = 10 V • Low Miller Charge • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor drives and Uninterruptible Powe |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82755 Applications • |
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Fairchild Semiconductor |
N-Channel MOSFET Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A High performance trench technology for extremely low rDS(on) 100% UIL tested RoHS Compliant General Description This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 33.5 mΩ (Typ.) @ VGS = 10 V, ID = 27 A • Fast Switching Speed • Low Gate Charge, QG = 14.3 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description |
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Fairchild Semiconductor |
N-Channel MOSFET • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Co |
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Fairchild Semiconductor |
150mW Bi-directional Trigger Diodes • VBO : 32V Version • Low break-over current • DO-35 package (JEDEC) • Hermetically sealed glass • Compression bonded construction • All external surfaces are corrosion resistant and terminals are readily solderable • RoHS compliant • High reliabilit |
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Fairchild Semiconductor |
Smart Power Module • Low thermal resistance due to Al2O3-DBC substrate • 600V-30A 2-phase IGBT PWM semi-converter including a drive IC for gate driving and protection • Typical switching frequency of 20kHz • Isolation rating of 2500Vrms/min. Applications • AC 180V ~ 2 |
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