| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
N-Channel MOSFET 0.22 A, 50V. RDS(ON) = 3.5Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). Rugged and Relaible Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ |
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Fairchild Semiconductor |
N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage D • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Pb Free / RoHS Compliant G SOT - 23 Marking : SK S • Green Compound • ESD HBM |
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Fairchild Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS100: 0.22A, 100V. RDS(ON) = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. ___________________________________________ |
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Fairchild Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. __________________________________ |
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Fairchild Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor • 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V RDS(ON) = 10Ω @ VGS = 4.5 V • High density cell design for extremely low RDS(ON) • Rugged and Reliable • Compact industry standard SOT-23 surface mount package DD SOT-23 S G Absolute Maximum Ratings TA=2 |
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Fairchild Semiconductor |
NPN General Purpose Amplifier mbient Max *BSS64 350 2.8 357 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation BSS64 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 2 |
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Fairchild Semiconductor |
P-Channel MOSFET -0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low RDS(ON) High Saturation Current D D S SOT-23 G G Absolute Maximum Ratings S Description This P-channel |
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Fairchild Semiconductor |
NPN General Purpose Amplifier BO IEBO hFE VCE(sat) Parameter Test Condition IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 60V VCB = 60V, Ta = 150°C VEB = 3.0V, IC = 0 IC = 150mA, VCE = 10V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 20mA, VCE = 20V, f = 100MHz |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(ON) = 3.5Ω @ VGS = 10V, ID = 0.22A RDS(ON) = 6.0Ω @ VGS = 4.5V, ID = 0.22A • High density cell design for extremely low RDS(ON) • Rugged and Reliable • Compact industry standard SOT-323 surface mount package D S G SOT-323 Marking : 138 Abso |
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Fairchild Semiconductor |
PNP General Purpose Amplifier torage Temperature Range -100 -110 -6 -200 -55 to +150 V V V mA °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involvin |
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Fairchild Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor • 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V • High Density Cell Design for Low RDS(ON) • Rugged and Reliable • Ultra Small Surface Mount Package • Very Low Capacitance • Fast Switching Speed • Lead Free / RoHS Compliant |
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