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BSS110 |
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| Part Number | BSS110 |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize o... |
| Features |
BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current.
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S
G
D
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
BSS84
BSS110
Units
VDSS VDGR VGSS ID PD TJ,TSTG TL
Drain-Source Voltage Drain-Gate Voltage (RGS < 20 KΩ) Gate-Source Voltage - Continuous Drain Current - Continuous @ TA = 30/35 C - Pulsed @ TA = 25 C... |
| Document |
 BSS110 Data Sheet
PDF 285.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSS110 |
Siemens Semiconductor |
SIPMOS Small-Signal Transistor |
|
| 2 | BSS110 |
NXP |
P-channel enhancement mode vertical D-MOS transistor |
|
| 3 | BSS119 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor |
|
| 4 | BSS119 |
INFINEON |
SIPMOS Small-Signal Transistor |
|
| 5 | BSS119N |
Infineon Technologies |
Small-Signal-Transistor |
|