No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD1 |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13610S BD13610STU BD13616S BD13616STU BD13810STU BD13816STU BD14010STU BD |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13610S BD13610STU BD13616S BD13616STU BD13810STU BD13816STU BD14010STU BD |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13610S BD13610STU BD13616S BD13616STU BD13810STU BD13816STU BD14010STU BD |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD1 |
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Fairchild Semiconductor |
NPN Epitxial Silicon Transistor 100 240 µA µA µA µA Test Condition IC = 1mA, IB = 0 Min. 250 300 350 Typ. Max. Units V V V ICBO * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD157/158/159 Typical Characteristics 1 |
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Fairchild Semiconductor |
NPN Epitxial Silicon Transistor 100 240 µA µA µA µA Test Condition IC = 1mA, IB = 0 Min. 250 300 350 Typ. Max. Units V V V ICBO * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD157/158/159 Typical Characteristics 1 |
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Fairchild Semiconductor |
NPN Epitxial Silicon Transistor 100 240 µA µA µA µA Test Condition IC = 1mA, IB = 0 Min. 250 300 350 Typ. Max. Units V V V ICBO * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD157/158/159 Typical Characteristics 1 |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD1 |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 2.Collector 3.Base 1. Emitter Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S B |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 2.Collector 3.Base 1. Emitter Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S B |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 2.Collector 3.Base 1. Emitter Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S B |
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Fairchild Semiconductor |
Small Signal Diodes |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor 80V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 150mA VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCE = 10V, IC = 250mA IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Bas |
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Fairchild Semiconductor |
Small Signal Diodes |
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Fairchild Semiconductor |
Small Signal Diodes |
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Fairchild Semiconductor |
Small Signal Diodes |
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Fairchild Semiconductor |
Small Signal Diodes |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor On Voltage Current Gain Bandwidth Product Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 100 - 100 -1 40 15 250 - 0.8 - 1.3 3 V V MHz Typ. Max. Units V V V µA µA µA mA ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor 80V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 150mA VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCE = 10V, IC = 250mA IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Bas |
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