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BD157 |
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| Part Number | BD157 |
| Manufacturer | Fairchild Semiconductor |
| Description | BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitxial Silicon Transistor Absolute Maximum ... |
| Features |
100 240 µA µA µA µA Test Condition IC = 1mA, IB = 0 Min. 250 300 350 Typ. Max. Units V V V
ICBO
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD157/158/159
Typical Characteristics
100 0
V CE = 10V
2.0
IC = 10 IB
VCE(sat)[V], SATURATION VOLTAGE
1E -3 0.00 1 0.01 0.1 1
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1E-4
hFE, DC CURRENT GAIN
100
10
1 1E -401 0.00
1E-3
0.01
0.1
1
I C [A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
10
25
IC[A], C... |
| Document |
 BD157 Data Sheet
PDF 38.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD157 |
Motorola Inc |
Plastic Medium Power NPN Silicon Transistor |
|
| 2 | BD157 |
INCHANGE |
NPN Transistor |
|
| 3 | BD158 |
Fairchild Semiconductor |
NPN Epitxial Silicon Transistor |
|
| 4 | BD158 |
Motorola Inc |
Plastic Medium Power NPN Silicon Transistor |
|
| 5 | BD158 |
INCHANGE |
NPN Transistor |
|