BD177 |
Part Number | BD177 |
Manufacturer | Fairchild Semiconductor |
Description | BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Abso... |
Features |
80V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 150mA VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCE = 10V, IC = 250mA
IEBO hFE1 hFE2 VCE(sat) VBE(on) fT
Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
hFE Classificntion
Classification hFE1
* Classification 16: Only BD175
6 40 ~ 100
10 63 ~ 160
16 100 ~ 250
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD175/177/179
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATI... |
Document |
BD177 Data Sheet
PDF 37.60KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BD170 |
CDIL |
PNP PLASTIC POWER TRANSISTORS | |
2 | BD1722N5050AHF |
Anaren Microwave |
Ultra Low Profile 0404 Balun | |
3 | BD175 |
TRANSYS |
EPITAXIAL SILICON POWER TRANSISTORS | |
4 | BD175 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | BD175 |
CDIL |
EPITAXIAL SILICON POWER TRANSISTORS |