| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
NPT Trench IGBT • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C • Extremely Enhanced Avalanche Capability Applicat |
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Fairchild Semiconductor |
IGBT • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applicat |
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Fairchild Semiconductor |
Field Stop Trench IGBT • Field Stop Trench Technology • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 25 A • High Input Impedance • RoHS Complaint Applications • Induction Heating, Microvewave Oven General Description Using advanced field stop tre |
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Fairchild Semiconductor |
N-Channel SuperFET II Easy-Drive MOSFET • 650 V @TJ = 150°C • Typ. RDS(on) = 102 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Pow |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 400V Low RDS(ON) : 0.162 Ω (Typ.) SSH25N40A BVDSS = 400 V RDS(on) = 0.2 |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability • RoHS compliant General Description This N-Channel |
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Fairchild Semiconductor |
N-Channel MOSFET • 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V • Low gate charge (typical 58nC) • Low Crss (typical 40pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant LE REE I DF September 2006 ® General Description These N-Channe |
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Fairchild Semiconductor |
IGBT • High speed switching • Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A • High input impedance Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G E TO-3P G C E Absolute Maximum Ratings Symbol VCE |
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Fairchild Semiconductor |
N-Channel MOSFET • 650 V @TJ = 150°C • Typ. RDS(on) = 102 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Pow |
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Fairchild Semiconductor |
IGBT • • • • High speed switching Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A High input impedance CO-PAK, IGBT with FRD : trr = 235ns (typ.) Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G TO-3P |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET |
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Fairchild Semiconductor |
25A NPT Trench IGBT • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C • Extremely Enhanced Avalanche Capability Appl |
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Fairchild Semiconductor |
FCH25N60N • RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) • 100% Avalanche Tested • RoHS Compliant Description The SupreMOS® MOSFET is Fairchild Semico |
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Fairchild Semiconductor |
N-Channel MOSFET |
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Fairchild Semiconductor |
IGBT • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.60 V @ IC = 25 A • High Input Impedance • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC General Description Using advanced field stop trench technology, Fairchild’s 1200V |
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Fairchild Semiconductor |
IGBT • Short circuit rated 10µs @ TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage : VCE(sat) = 2.3 V @ IC = 25A • High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C |
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Fairchild Semiconductor |
25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs • 25A, 60V • rDS(ON) = 0.047Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” |
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Fairchild Semiconductor |
25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs • 25A, 60V • rDS(ON) = 0.047Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” |
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Fairchild Semiconductor |
Advanced Power MOSFET |
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Fairchild Semiconductor |
N-Channel MOSFET SupreMOS® January 2011 tm N-Channel MOSFET 600V, 25A, 0.126Ω Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-ep |
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