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FDI025N06 |
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| Part Number | FDI025N06 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching... |
| Features |
• RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability • RoHS compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application • DC to DC convertors / Synchronous Rectification D GDS TO-262 FDI Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted ... |
| Document |
 FDI025N06 Data Sheet
PDF 502.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDI030N06 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDI036N10A |
INCHANGE |
N-Channel MOSFET |
|
| 3 | FDI038AN06A0 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDI038AN06A0 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDI040N06 |
Fairchild Semiconductor |
N-Channel MOSFET |
|