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FDP025N06 |
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| Part Number | FDP025N06 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performa... |
| Features |
• RDS(on) = 1.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Renewable sys... |
| Document |
 FDP025N06 Data Sheet
PDF 802.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDP020N06B |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 2 | FDP023N08B |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FDP027N08B |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDP027N08B |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 5 | FDP030N06 |
Fairchild Semiconductor |
MOSFET |
|