| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET General Description Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD solutions RoHS Compliant This quad MOSFET solution provides ten-fold improvement in power d |
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ON Semiconductor |
N-Channel MOSFET • Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A • Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A • Substantial Efficiency Benefit in PD Solutions • This Device is Pb−Free, Halid Free and is RoHS Compliant Applications • High−Efficiency Bridge Rectifier |
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