FDMQ8403 |
Part Number | FDMQ8403 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | This quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge. Features • Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A • Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A ... |
Features |
• Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A • Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A • Substantial Efficiency Benefit in PD Solutions • This Device is Pb−Free, Halid Free and is RoHS Compliant Applications • High−Efficiency Bridge Rectifiers MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current A − Continuous (Package Limited) TC = 25°C 6 − Continuous (Silicon Limited) TC = 25°C 9 − Continuous (Note 1a.) TA = 25°C 3.1 − Pulsed 12 PD Power Dissipation... |
Document |
FDMQ8403 Data Sheet
PDF 336.59KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | FDMQ8403 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
2 | FDMQ8203 |
Fairchild Semiconductor |
Dual N-Channel and Dual P-Channel PowerTrench MOSFET | |
3 | FDMQ8203 |
ON Semiconductor |
Dual N-Channel and Dual P-Channel Power MOSFET | |
4 | FDMQ8205 |
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2 Series of High-Efficiency Bridge Rectifiers | |
5 | FDMQ8205 |
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High-Efficiency Bridge Rectifiers |