FDMQ8403 |
Part Number | FDMQ8403 |
Manufacturer | Fairchild Semiconductor |
Description | Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD solutions RoHS Compliant This quad MOSFET solution provides te... |
Features |
General Description
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD solutions
RoHS Compliant
This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.
Application
High-Efficiency Bridge Rectifiers
Top
Bottom
G4 D1/D4 D3/S4
G3 S3 S3
D1/D4
D3/ S1/ S4 D2
MLP 4.5x5
Pin 1 G1 D1/D4 S1/D2 G2 S2 S2
S3 7 S3 8 G3 9 D3/S4 10 D1/D4 11 G4 12
Q3 Q2 Q4 Q1
6 S2 5 S2 4 G2 3 S1/D2 2 D1/D4 1 G1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
PD ... |
Document |
FDMQ8403 Data Sheet
PDF 234.49KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDMQ8403 |
ON Semiconductor |
N-Channel MOSFET | |
2 | FDMQ8203 |
Fairchild Semiconductor |
Dual N-Channel and Dual P-Channel PowerTrench MOSFET | |
3 | FDMQ8203 |
ON Semiconductor |
Dual N-Channel and Dual P-Channel Power MOSFET | |
4 | FDMQ8205 |
Fairchild Semiconductor |
2 Series of High-Efficiency Bridge Rectifiers | |
5 | FDMQ8205 |
ON Semiconductor |
High-Efficiency Bridge Rectifiers |