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DIODES BAS DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BAS70-05-HT3

Vishay Siliconix
Schottky Diodes

• These diodes feature very low turn-on voltage and fast switching.
• These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
• Space saving LiLiPut package Top view Pin 1 BAS70-HT3 3 BAS
Datasheet
2
BAS70

STMicroelectronics
Low series inductance and resistance Schottky diodes






■ BAS70ZFILM (Single) SOD-123 BAS70JFILM (Single) SOD-323 BAS70KFILM (Single) SOD-523 BAS70FILM (Single) BAS70-04FILM (Series) BAS70-05FILM (Common cathode) BAS70-06FILM (Common anode) Very low conduction losses Negligible switching losse
Datasheet
3
BAS21

CYStech Electronics
High voltage switching (double) diodes

•Fast switching speed
•Low forward voltage drop
•Pb-free lead plating and halogen-free package Mechanical Data
•Case : SOT-23, molded plastic
•Terminals : Solderable per MIL-STD-202 Method 208
•Weight : 0.008 grams(approx.) Pinning Pin 1 2 3 BAS21
Datasheet
4
BAS40-06LT1G

ON Semiconductor
Common Anode Schottky Barrier Diodes
Datasheet
5
BAS40-06

Vishay
Small Signal Schottky Diodes

• These diodes feature very low turn-on voltage and fast switching Available
• These devices are protected by a PN junction guardring against excessive voltage, such as electrostatic discharges
• AEC-Q101 qualified available
• Molding compound m
Datasheet
6
BAS316

LGE
Silicon Epitaxial Planar Diodes
— Very small plastic SMD package. — High switching speed:max.4ns — Continuous reverse voltage:max.100v — Repetitive peak reverse voltage:max.100v — Repetitive peak forward current:max.500mA Applications — Surface mount fast switching diode Ordering
Datasheet
7
BAS16

NXP
High-speed switching diodes
and benefits
 High switching speed: trr  4 ns
 Low leakage current
 Repetitive peak reverse voltage: VRRM  100 V
 AEC-Q101 qualified
 Low capacitance
 Reverse voltage: VR  100 V
 Small SMD plastic packages 1.3 Applications
 High-speed sw
Datasheet
8
BAS78

Infineon Technologies AG
Silicon Switching Diodes
haracteristics Breakdown voltage I(BR) = 100 µA BAS78A BAS78B BAS78C BAS78D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recover
Datasheet
9
BAS40W

SeCoS
Surface Mount Schottky Barrier Diodes

 Low Turn-on Voltage
 Low Forward Voltage
 Very Low Capacitance Less Than 5.0pF @ 0V
 For high speed switching application, circuit protection V A L Top View G BS MECHANICAL DATA
 Case: SOT-323, Molded Plastic
 Terminals: Solderable per MIL
Datasheet
10
BAS21

EIC
HIGH VOLTAGE SWITCHING DIODES
: * Small plastic SMD package * Switching speed: max. 50 ns * General application * Continuous reverse voltage: max. 100V, 150V, 200V * Repetitive peak reverse voltage: max. 120V, 200V, 250V * Pb / RoHS Free MECHANICAL DATA : * Case : SOT-23 plastic
Datasheet
11
BAS16X

Eris
Plastic-Encapsulate Diodes
‧High-Speed Switching Applications ‧Lead Finish: 100% Matte Sn ( Tin ) ‧Qualified Reflow Temperature: 260 ℃ ‧Pb-Free package is available ‧RoHS product for packing code suffix "G" ‧Halogen free product for packing code suffix "H" ‧Moisture Sensitivit
Datasheet
12
BAS16W

Diotec
Fast Switching Surface Mount Si-Planar Diodes
Datasheet
13
BAS116

Diodes Incorporated
SURFACE MOUNT LOW LEAKAGE DIODE

 Surface Mount Package Ideally Suited for Automated Insertion
 Very Low Leakage Current
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 The DIODES™ BAS116Q is suitable for automotive a
Datasheet
14
BAS125-05W

Infineon Technologies AG
Silicon Schottky Diodes
25W BAS125-04W...06W 1For calculation of R thJA please refer to Application Note Thermal Resistance RthJS K/W  230  265 1 Nov-15-2001 BAS125W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. D
Datasheet
15
BAS125W

Siemens Semiconductor Group
Preliminary data Silicon Schottky Diodes
Junction - soldering point, BAS125-04W...06W 1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm Semiconductor Group 1 Dec-20-1996 BAS 125W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristi
Datasheet
16
BAS16VY

NXP
High-speed switching diodes
and benefits
 High switching speed: trr  4 ns
 Low leakage current
 Repetitive peak reverse voltage: VRRM  100 V
 AEC-Q101 qualified
 Low ca
Datasheet
17
BAS19W

Diodes Incorporated
SURFACE MOUNT FAST SWITCHING DIODE

 Fast Switching Speed
 Surface Mount Package Ideally Suited for Automated Insertion
 For General Purpose Switching Applications
 High Conductance
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device
Datasheet
18
BAS21

NXP
General purpose diodes

• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 100 V; 150 V; 200 V
• Repetitive peak reverse voltage: max. 120 V; 200 V; 250 V
• Repetitive peak forward current: max. 625 mA. PINNIN
Datasheet
19
BAS21

Diodes Incorporated
SURFACE MOUNT FAST SWITCHING DIODE

 Fast Switching Speed
 Surface Mount Package Ideally Suited for Automated Insertion
 For General-Purpose Switching Applications
 High Conductance
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device
Datasheet
20
BAS21H

Eris
Plastic-Encapsulate Diodes
‧Small plastic SMD package ‧Continuous reverse voltage: max. 250 V ‧Pb-Free package is available ‧Moisture Sensitivity Level 1 ‧Polarity: Color band denotes cathode end ‧Marking : JS Ordering Information Part No. Remark Package BAS21H General
Datasheet



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