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BAS125-05W |
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| Part Number | BAS125-05W |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BAS125W Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage 3 2 1 BAS125W BAS125... |
| Features |
25W BAS125-04W...06W
1For calculation of R thJA please refer to Application Note Thermal Resistance
RthJS
K/W
230 265
1
Nov-15-2001
BAS125W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA AC characteristics
Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Rf CT
Unit max. nA
typ.
IR VF 385 530 800 400 650 950 100 150
mV
-
16
1.1 -
pF
2
Nov-15-2001
BAS125W
Forward current IF = ... |
| Document |
 BAS125-05W Data Sheet
PDF 58.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAS125-05 |
Siemens Semiconductor Group |
Silicon Schottky Diodes |
|
| 2 | BAS125-05W |
Siemens Semiconductor Group |
Preliminary data Silicon Schottky Diodes |
|
| 3 | BAS125-04 |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 4 | BAS125-04W |
Siemens Semiconductor Group |
Preliminary data Silicon Schottky Diode |
|
| 5 | BAS125-04W |
Infineon Technologies AG |
Silicon Schottky Diodes |
|