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BAS125W |
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| Part Number | BAS125W |
| Manufacturer | Siemens Semiconductor Group |
| Description | BAS 125W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS 1... |
| Features |
Junction - soldering point, BAS125-04W...06W
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
Semiconductor Group
1
Dec-20-1996
BAS 125W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
IR
385 530 800 150 200
nA
VR = 20 V VR = 25 V
Forward voltage
VF
400 650 900
mV
IF = 1 mA IF = 10 mA IF = 35 mA
AC Characteristics Diode capacitance
CT
16 1.1
pF Ω -
VR = 0 V, f = 1 MHz
Differential forward resistance
RF
IF = 5 mA, f = 10 kHz
Semiconductor Group
2
Dec-20-1996
BAS 125W
Forward... |
| Document |
 BAS125W Data Sheet
PDF 106.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAS125 |
Siemens Semiconductor Group |
Silicon Schottky Diodes |
|
| 2 | BAS125-04 |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 3 | BAS125-04W |
Siemens Semiconductor Group |
Preliminary data Silicon Schottky Diode |
|
| 4 | BAS125-04W |
Infineon Technologies AG |
Silicon Schottky Diodes |
|
| 5 | BAS125-05 |
Siemens Semiconductor Group |
Silicon Schottky Diodes |
|