No. | Partie # | Fabricant | Description | Fiche Technique |
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Comset |
(2N2646 / 2N2647) SILICON UNIJONCTION TRANSISTORS n Storage Temperature Range 2N2646 30 30 50 2 300 2N2647 V V mA A mW 150 -55 to +175 °C ELECTRICAL CHARACTERISTICS TJ=25°C unless otherwise noted, RGK=1000Ω Symbol IEO V(BR)B1E Ratings Emitter Reverse Current Base 1 – Emitter Breakdown Voltage |
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Comset Semiconductor |
General Purpose Amplifier Transistors K/W K/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP 2N2907 – 2N2907A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO ICEX VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff |
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Comset |
(2N2646 / 2N2647) SILICON UNIJONCTION TRANSISTORS n Storage Temperature Range 2N2646 30 30 50 2 300 2N2647 V V mA A mW 150 -55 to +175 °C ELECTRICAL CHARACTERISTICS TJ=25°C unless otherwise noted, RGK=1000Ω Symbol IEO V(BR)B1E Ratings Emitter Reverse Current Base 1 – Emitter Breakdown Voltage |
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Comset Semiconductor |
Switching Silicon Transistors useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Un |
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Comset Semiconductor |
General Purpose Amplifier Transistors NP 2N2906 – 2N2906A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current (*) Collector Emitter Breakdown Voltage Collector Ba |
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Comset Semiconductors |
(2N2322 - 2N2326) SILICON THYRISTORS .net/ 2n2322 to 2n2326 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM Ratings Peak Forward Blocking Min : Voltage (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (R |
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Comset Semiconductor |
Silicon Planar Epitaxial NPN transistor VCEO Ratings Collector Cutoff Current Emitter Cutoff Current Collector Base Sustaining Voltage Collector Emitter Sustaining Voltage (*) Test Condition(s) VCB= 60 V IE= 0 VEB= 5 V, IC= 0 IC= 100 µA, IE= 0 IC= 30 mA, IB= 0 IC= 10 µA, VCE= 10 V IC= 0. |
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Comset Semiconductor |
Switching Silicon Transistors useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6 |
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Comset Semiconductor |
Switching Silicon Transistors useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6 |
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Comset Semiconductor |
Switching Silicon Transistors useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Un |
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Comset Semiconductor |
Switching Silicon Transistors useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Un |
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Comset Semiconductor |
Switching Silicon Transistors useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Un |
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Comset Semiconductor |
General Purpose Amplifier Transistors NP 2N2906 – 2N2906A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current (*) Collector Emitter Breakdown Voltage Collector Ba |
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Comset Semiconductor |
General Purpose Amplifier Transistors K/W K/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP 2N2907 – 2N2907A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO ICEX VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff |
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Comset Semiconductor |
Switching Silicon Transistors useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6 |
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Comset Semiconductor |
Switching Silicon Transistors useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6 |
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Comset Semiconductor |
SILICON PLANAR EPITAXIAL TRANSISTORS urrent Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB=45 V, IE=0 VCB=45 V, IE=0 Tj=150°C VBE=5.0 V, IC=0 IC=10 mA, IB=0 IC=10 |
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Comset Semiconductor |
NPN Transistor Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB =-6 V, IE =0V, Tj =125°C VBE =0 V, VCE =-6 V IC =-10 mA, IB =0 VBE =0 V, IC =-10 µA IC =-1 |
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Comset Semiconductors |
(2N2322 - 2N2326) SILICON THYRISTORS .net/ 2n2322 to 2n2326 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM Ratings Peak Forward Blocking Min : Voltage (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (R |
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Comset Semiconductors |
(2N2322 - 2N2326) SILICON THYRISTORS .net/ 2n2322 to 2n2326 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM Ratings Peak Forward Blocking Min : Voltage (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (R |
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