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Features
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Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage
Test Condition(s)
VCB =-6 V, IE =0V, Tj =125°C VBE =0 V, VCE =-6 V IC =-10 mA, IB =0 VBE =0 V, IC =-10 µA IC =-10 µA, IE =0 IE =-100 µA, IC =0
Min
-12 -12 -12 -4
Typ
-
Mx
-10 -80 -
Unit
µA nA V V V V
COMSET SEMICONDUCTORS
1/2
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N2894
Symbol
hFE (*)
Ratings
DC Current Gain
Test Condition(s)
IC =-10 mA, VCE =-0.3 V IC =-30 mA, VCE =-0.5 V IC =-100 mA, VCE =-1 V IC =150 mA, VCE =10 V
Min
30 40 25 17 -0....
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2N2894 Data Sheet
