2N2647 |
Part Number | 2N2647 |
Manufacturer | Comset |
Description | 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much hi... |
Features |
n Storage Temperature Range
2N2646
30 30 50 2 300
2N2647
V V mA A mW
150 -55 to +175 °C
ELECTRICAL CHARACTERISTICS
TJ=25°C unless otherwise noted, RGK=1000Ω
Symbol
IEO V(BR)B1E
Ratings
Emitter Reverse Current Base 1 – Emitter Breakdown Voltage IE =100 µA 2N2646 – 2N2647 Min Max 12 µA V 1/2 30 COMSET SEMICONDUCTORS 2N2646 2N2647 2N2646 – 2N2647 Symbol RBBO Ratings Interbase Resistance VB1B2 = 3 V Intrinsic stand-off ratio VB1B2 = 10 V Emitter Saturation Voltage IE = 50 mA, VB1B2 = 10 V Valley Current VB1B2 = 20 V Peak Current VB1B2 = 25 V 2N2646 2N2647 2N2646 2N2647 2N2646 2N2647 ... |
Document |
2N2647 Data Sheet
PDF 87.20KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N2640 |
Motorola |
DUAL AMPLIFIER TRANSISTORS NPN SILICON | |
2 | 2N2640DCSM |
Seme LAB |
Dual Bipolar NPN Devices | |
3 | 2N2641 |
Motorola |
DUAL AMPLIFIER TRANSISTORS | |
4 | 2N2642 |
Motorola |
DUAL AMPLIFIER TRANSISTORS | |
5 | 2N2643 |
Motorola |
DUAL AMPLIFIER TRANSISTORS |