| No. | Partie # | Fabricant | Description | Fiche Technique |
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Chinahaiso electronic |
MOSFET () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃) Absolute maximum ratings Characteristics T=25℃ unless otherwise noted Symbol BV DSS ID V GS E AS PD T STG Rθ JC |
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Chinahaiso electronic |
N-channel enhancement mode power field effect Transistors e threshold voltage Gate-Body leakage Current Zero Gate voltage Drain current Static drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-o |
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