| No. | Partie # | Fabricant | Description | Fiche Technique |
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Champion |
Power MOSFET This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commu |
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Champion Microelectronic Corporation |
N-Channel MOSFET ! ! ! Silicon N-channel MOSFET Low Qg Low on-resistance Excellent resistance to damage from static electricity PIN CONFIGURATION 8-PIN SOP (S08) SYMBOL D R AIN Top View 1 2 3 4 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN 8 7 6 5 G AT |
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Champion |
POWER FIELD EFFECT TRANSISTOR ! ! Silicon Gate for Fast Switching Speeds Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperature Rugged – SOA is Power Dissipation Limited Source-to-Drain Characterized for Use With Inductive Loads PIN CONFIGURATION TO-220 SYMBOL Fr |
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Champion Microelectronic |
P-CHANNEL ENHANCEMENT MODE MOSFET Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM SO-8 Package Design APPLICATIONS Power Management in Noteboo |
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Champion Microelectronic |
N-CHANNEL Logic Level Power MOSFET Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Improved UIS Ruggedness PIN CONFIGURATION TO-252 TO-263 SYMBOL D Front View Front View D www.DataSheet4U.com SOURCE DRAIN GATE G 1 2 3 S G 1 2 3 S |
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Champion |
Power MOSFET This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commu |
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Champion |
P-Channel MOSFET The CMT2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These de |
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Champion |
POWER FIELD EFFECT TRANSISTOR ! ! Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION TO-220 SYMBOL D |
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Champion |
POWER MOSFET Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN CONF |
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Champion |
POWER FET This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commu |
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Champion |
Power MOSFET Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature |
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Champion Microelectronic |
25V N-CHANNEL ENHANCEMENT-MODE MOSFET Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current PIN CONFIGURATION TO-252 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET Maximu |
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Champion Microelectronic |
N-CHANNEL Logic Level Power MOSFET Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Improved UIS Ruggedness PIN CONFIGURATION TO-252 TO-263 SYMBOL D Front View Front View D www.DataSheet4U.com SOURCE DRAIN GATE G 1 2 3 S G |
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Champion Microelectronic |
N-CHANNEL Logic Level Power MOSFET Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves PIN CONFIGURATION TO-220 SYMBOL D Front View www.DataSheet4U.com GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain |
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Champion Microelectronic |
N-CHANNEL Logic Level Power MOSFET Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves PIN CONFIGURATION TO-220 SYMBOL D Front View www.DataSheet4U.com GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rati |
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Champion |
POWER MOSFET ! Dynamic dv/dt Rating ! Repetitive Avalanche Rated ! Fast Switching ! Ease of Paralleling ! Simple Drive Requirements SYMBOL D GATE DRAIN SOURCE G 12 3 S N-Channel MOSFET ORDERING INFORMATION Part Number CMT09N20N220 Package TO-220 ABSOLUTE |
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Champion |
Power MOSFET This Power MOSFET is designed to withstand high energy ! in avalanche and commutation modes. The new energy ! efficient design also offers a drain-to-source diode with a ! fast recovery time. Designed for high voltage, high speed switching appl |
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Champion |
Power MOSFET This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation |
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Champion |
Power MOSFET This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and |
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Champion |
Power MOSFET Higher Current Rating Lower rDS(ON), Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified SYMBOL D GATE DRAIN SOURCE G 12 3 S N-Channel MOSFET ORDERING INFORMATION Part Number CMT05N50N220 C |
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