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CMT08N50 |
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| Part Number | CMT08N50 |
| Manufacturer | Champion |
| Description | This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to w... |
| Features |
Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
SYMBOL
D
GATE DRAIN SOURCE
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating Drain to Current － Continuous
－ Pulsed Gate-to-Source Voltage － Continue
－ Non-repetitive
Total Power Dissipation TO-220 TO-220FP
Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 8A... |
| Document |
 CMT08N50 Data Sheet
PDF 214.66KB |
| Distributor | Stock | Price | Buy |
|---|
