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CMT2301 |
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| Part Number | CMT2301 |
| Manufacturer | Champion |
| Description | FEATURES The CMT2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is espec... |
| Features |
The CMT2301 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.
This high density process is especially tailored to minimize
on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook computer
power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline
surface mount package.
-20V/-2.3A ,RDS(ON)=130 mΩ@VGS=-4.5V -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V Super high density cell desi... |
| Document |
 CMT2301 Data Sheet
PDF 219.51KB |
| Distributor | Stock | Price | Buy |
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