| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
CET |
N-Channel MOSFET 20V, 2A, RDS(ON) = 65mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-323 package. D DS G SOT-323(SC-70) G S ABSOLUTE MAXIMUM RATINGS TA = |
|
|
|
|
CET |
P-Channel MOSFET -20V, -1.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-323 package. D DS G SOT-323(SC-70) G S ABSOLUTE MAXIMUM RATINGS TA |
|