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CEV2306 |
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| Part Number | CEV2306 |
| Manufacturer | CET |
| Description | CEV2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 2A, RDS(ON) = 65mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and relia... |
| Features |
20V, 2A, RDS(ON) = 65mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-323 package.
D
DS G
SOT-323(SC-70)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 20
VGS ±8
Drain Current-Continuous Drain Current-Pulsed a
ID 2 IDM 8
Maximum Power Dissipation
PD 0.42
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symb... |
| Document |
 CEV2306 Data Sheet
PDF 468.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CEV2309 |
CET |
P-Channel MOSFET |
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| 2 | CEV-115-M-PB |
TRelectronic |
Absolute Encoder |
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| 3 | CEV-65M-A |
TR-Electronic |
Absolute Encoder |
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| 4 | CEV-65M-PB |
TR-Electronic |
Absolute Encoder |
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| 5 | CEV115M-PB |
TRelectronic |
Absolute Encoder |
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