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CEV2309 |
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| Part Number | CEV2309 |
| Manufacturer | CET |
| Description | CEV2309 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -1.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V. High dense cell design for extremely low RDS... |
| Features |
-20V, -1.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-323 package.
D
DS G
SOT-323(SC-70)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS -20
VGS ±8
ID -1.2 IDM -4.8
Maximum Power Dissipation
PD 0.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient... |
| Document |
 CEV2309 Data Sheet
PDF 253.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CEV2306 |
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| 2 | CEV-115-M-PB |
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| 3 | CEV-65M-A |
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| 4 | CEV-65M-PB |
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| 5 | CEV115M-PB |
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