| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Telefunken |
Silicon NPN Planar RF Transistor D Low noise figure D High power gain 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR182T Marking: RG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR182TW Marking: WRG Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter A |
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Infineon Technologies AG |
NPN Silicon RF Transistor °C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = |
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INCHANGE |
NPN Transistor IC= 0 1 μA hFE DC Current Gain IC=5mA ; VCE= 6V 50 fT Current-Gain—Bandwidth Product IC=5mA ; VCE= 3V ; f= 2GHz 8 8.5 GHz Cre Feed-Back Capacitance IE= 0 ; VCB=10V;f= 1.0MHz 0.65 1 pF ︱S21e︱2 Insertion Power Gain IC= 5mA ; VCE= 3V;f |
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Vishay Telefunken |
Silicon NPN Planar RF Transistor D Low noise figure D High power gain 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR182T Marking: RG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR182TW Marking: WRG Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter A |
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