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BFR182TW |
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| Part Number | BFR182TW |
| Manufacturer | INCHANGE |
| Description | ·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplif... |
| Features |
IC= 0
1
μA
hFE
DC Current Gain
IC=5mA ; VCE= 6V
50
fT
Current-Gain—Bandwidth Product IC=5mA ; VCE= 3V ; f= 2GHz
8
8.5 GHz
Cre
Feed-Back Capacitance
IE= 0 ; VCB=10V;f= 1.0MHz
0.65 1
pF
︱S21e︱2 Insertion Power Gain
IC= 5mA ; VCE= 3V;f= 2.0GHz
5.5
dB
NF
Noise Figure
IC= 5mA ; VCE= 3V;f= 2.0GHz
2.0
dB
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic... |
| Document |
 BFR182TW Data Sheet
PDF 218.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFR182T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 2 | BFR182T |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 3 | BFR182TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 4 | BFR182 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
|
| 5 | BFR182 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|