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BFR182T |
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| Part Number | BFR182T |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BFR182T NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: ... |
| Features |
°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Aug-09-2001
BFR182T
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 15 ... |
| Document |
 BFR182T Data Sheet
PDF 70.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFR182 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
|
| 2 | BFR182 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 3 | BFR182T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 4 | BFR182TW |
INCHANGE |
NPN Transistor |
|
| 5 | BFR182TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|