Advanced Semiconductor 2N6 fiche technique

No.	Partie #	Fabricant	Description
1	FIR2N60FG	First Semiconductor	Advanced N-Ch Power MOSFET • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=3.4F(Typ.) • Low gate charge : Qg= 7.0nC(Typ.) • Low RDS(on) :RDS(on)=7.0Ω(Max.) G D S D G S Marking Diagram Y A YAWW = Year = Assembly Location = Work Week WW FIR2N60F FIR2N60F = Specific De
2	2N6161	Advanced Semiconductor	Silicon Controlled Rectifiers
3	2N6166	Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR • ηC = 60 % min. @ 100 W/150 MHz • PG = 6.0 dB min. @ 100 W/150 MHz • Omnigold™ Metalization System C B B E H D G F E I J K MAXIMUM RATINGS IC VCBO VEBO PDISS TJ TSTG θJC 9.0 A 65 V 4.0 V 117 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C
4	2N6199	Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR • PG = 10 dB Typical at 25 W/175 MHz • ∞ Load VSWR at Rated Conditions • Omnigold™ Metallization System D E B H I J #8-32 UNC-2A F E G MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 4.0 A 65 V 40 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +150 °C 4.4
5	SSP2N60A	Fairchild Semiconductor	Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) 1 2 3 SSP2N60A BVDSS = 600 V RDS(on)
6	VS2N60AZ	Vanguard Semiconductor	N-Channel Advanced Power MOSFET  N-Channel，10V Logic Level Control  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant VS2N60AZ 600V/2A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 600 V 5 Ω 2 A SOT223 Part ID VS2N60AZ Package Ty
7	VS2N60AD	Vanguard Semiconductor	N-Channel Advanced Power MOSFET  N-Channel，10V Logic Level Control  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant VS2N60AD 600V/2A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 600 V 5Ω 2A TO-252 Part ID VS2N60AD Package Type TO-2
8	2N6132	Advanced Semiconductor	Silicon PNP Power Transistor
9	SSS2N60A	Fairchild Semiconductor	Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) SSS2N60A BVDSS = 600 V RDS(on) = 5 Ω
10	SSU2N60A	Fairchild Semiconductor	Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) BVDSS = 600 V RDS(on) = 5 Ω ID = 1.8
11	SSR2N60A	Fairchild Semiconductor	Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) BVDSS = 600 V RDS(on) = 5 Ω ID = 1.8
12	2N6439	Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR INCLUDE: • Internal Input Matching Network • 30:1 Load VSWR Capability • All Gold Metalization MAXIMUM RATINGS VCB 60 V PDISS 146 W @ TC = 25 °C TSTG θJC -65 °C to +200 °C 1.2 °C/W PACKAGE STYLE .500 6L FLG 1 = Collector 2 = Base 3 & 4 = Emitt