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SSR2N60A |
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| Part Number | SSR2N60A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET SSR/U2N60A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 2... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.)
BVDSS = 600 V RDS(on) = 5 Ω ID = 1.8 A
D-PAK I-PAK
2
11
3
2 3
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 oC ) Continuous Drain Current (TC=100 oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy Avalanche Current
Repetitive Avalanche... |
| Document |
 SSR2N60A Data Sheet
PDF 261.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSR2N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | SSR2008CTM |
SSDI |
(SSR2008CTM - SSR2010CTM) CENTER TAP SCHOTTKY RECTIFIER |
|
| 3 | SSR2008CTZ |
SSDI |
(SSR2008CTZ - SSR2010CTZ) CENTER TAP SCHOTTKY RECTIFIER |
|
| 4 | SSR2008M |
SSDI |
(SSR2008M - SSR2010M) CHOTTKY RECTIFER |
|
| 5 | SSR2008Z |
SSDI |
(SSR2008Z - SSR2010Z) CHOTTKY RECTIFER |
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