| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Advanced Power Electronics |
AP4435GM-HF emperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 1 200811216 Free Datasheet http://www.datasheet4u.net/ AP4435GM-HF |
|
|
|
|
Advanced Power Electronics |
AP4501GM W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W Data and specificat |
|
|
|
|
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Maximum Thermal Resistance, Junction-ambient 3 Value 8 40 Unit ℃/W ℃/W Data and specifications subject to change without notice 1 200902103 Free Datasheet http://www.Datasheet-PDF.com/ AP4506GEH N-CH Electrical Characteristics@Tj=25 C(unless o |
|
|
|
|
Advanced Power Electronics |
ENHANCEMENT MODE POWER MOSFET Value 2.3 62 Units ℃/W ℃/W Data and specifications subject to change without notice 200218051 AP4407GR Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Condition |
|
|
|
|
Advanced Power Electronics |
ENHANCEMENT MODE POWER MOSFET 4435D Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions Min. -30 -1 - Typ. -0.03 Max. Units 20 35 -3 -1 -25 ±100 42 V V/℃ mΩ mΩ V S uA uA nA nC nC nC n |
|
|
|
|
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET ting Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP4423GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel |
|
|
|
|
Advanced Power Electronics |
N-Channel MOSFET Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range 30 +20 60 26.1 20.9 160 36.7 5 -55 to 150 -55 to 150 V V A A A A W W ℃ ℃ Thermal Data |
|
|
|
|
Advanced Power Electronics |
AP40T03GP GS @ 10V Pulsed Drain Current 1 Rating 30 ±25 28 24 95 31.25 0.25 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Therm |
|
|
|
|
Advanced Power Electronics |
AP4953GM ction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 200810075 www.DataSheet4U.com AP4953GM Electrical Characte |
|
|
|
|
Advanced Power Electronics |
AP4957AGM 2191 Free Datasheet http://www.datasheet4u.net/ AP4957AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-25 |
|
|
|
|
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET rmal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit ℃/W Data and specifications subject to change without notice 201124043 AP4435GM Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔB |
|
|
|
|
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET bol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 1 200811045 AP4835GM Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(O |
|
|
|
|
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 2.8 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 20 |
|
|
|
|
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range -30 +25 -58 -18.5 -14.8 -200 50 5 -55 to 150 -55 to 150 V V A A A A W W ℃ ℃ Th |
|
|
|
|
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET nel 30 -30 +20 +20 7.0 -5.3 5.8 -4.7 20 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Valu |
|
|
|
|
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200504042 www.DataSheet4U.com AP4501GSD N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS |
|
|
|
|
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 12 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 200725064-1/7 www.DataSheet4U.com AP452 |
|
|
|
|
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET tions subject to change without notice 201016031 AP4228GM Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.03 |
|
|
|
|
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET thout notice 201016031 AP4228M Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. |
|
|
|
|
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ing Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 62 Unit ℃/W ℃/W Data & specifications sub |
|