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AP4501GSD |
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| Part Number | AP4501GSD |
| Manufacturer | Advanced Power Electronics |
| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 G2 S1 S2 Absolute Maximum... |
| Features |
ter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
200504042
www.DataSheet4U.com
AP4501GSD
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. Typ. Max. Units 30 1 0.03 12 9 2 5 6 5 19 4 645 150 95 27 50 3 1 25 13 800 V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=7A... |
| Document |
 AP4501GSD Data Sheet
PDF 133.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP4501GD |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP4501GM |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP4501GM-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP4501AGEM-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP4501AGEY-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|