No. | Partie # | Fabricant | Description | Fiche Technique |
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Advanced Power Electronics |
AP09N70P rce Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - /A 600/675 ± 30 9 5 40 156 1.25 2 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Rep |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200513041 AP2309N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Par |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 +30 8.3 5.2 40 156 2 Units V V A A A W mJ A mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Rang |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 305 9 9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal R |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET tal Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 40 8.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Res |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ed Drain Current1 5A 40 A PD@TC=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy2 156 W 40.5 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.8 62 Unit ℃/W ℃/W 1 201005131 Data & specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP09N20BGP-HF Electrical Charac |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 40 8.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resista |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 40 8.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junc |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 40 8.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junc |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET re Range Operating Junction Temperature Range 18 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 62 Units ℃/W ℃/W 1 200906041 Data a |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ergy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 32 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Valu |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET rce Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - /A 600/675 ± 30 9 5 40 156 1.25 2 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Rep |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ure Range Operating Junction Temperature Range 120 6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.6 40 Unit ℃/W ℃/W Data & specific |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ture Range Operating Junction Temperature Range 92 5.2 8.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.52 40 Unit ℃/W ℃/W Data & specifica |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Rating 200 +20 7.8 5 20 69 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case M |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET C °C Total Power Dissipation Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resis |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET near Derating Factor Single Pulse Avalanche Energy2 Storage Temperature Range Operating Junction Temperature Range 900 +30 8.6 5 30 240 1.92 18 -55 to 150 -55 to 150 V V A A A W W/℃ mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal R |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.8 62.5 Unit ℃/W ℃/W 1 201002111 Data & specifications subject to change without notice Free Datasheet http://www. |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Unit ℃/W ℃/W 1 201011081 Data & specifications subject to change without notice Free Datasheet http |
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