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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET A A A W W °C °C Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junctio |
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APTech |
1/4 INCH DIAPHRAGM VALVE – Open/closed status indication window – LOTO – integral standard feature PSIG / BAR 250 / 17 300 / 21 3,000 / 207 l l l l l l AP 3659 l AP 3657 Pneumatic valves, normally closed (NC) 125 / 9 AP 3000 and 3002 – Switch option for remote |
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Renesas |
Gate Driver ⚫ On-chip Micro Isolator (isolated circuit) ➢ High voltage isolation: 3750Vrms, 1min ➢ High CMTI (Common Mode Transient Immunity): over 150V/ns ⚫ High output gate drive circuit ➢ Gate drive output peak current (Source / Sink): 10A typ. / 10A typ. ➢ O |
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Advanced Power Electronics |
AP4957AGM 2191 Free Datasheet http://www.datasheet4u.net/ AP4957AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-25 |
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Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET nel 30 -30 +20 +20 7.0 -5.3 5.8 -4.7 20 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Valu |
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APTech |
1/4 INCH DIAPHRAGM VALVE – Open/closed status indication window – LOTO – integral standard feature PSIG / BAR 250 / 17 300 / 21 3,000 / 207 l l l l l l AP 3659 l AP 3657 Pneumatic valves, normally closed (NC) 125 / 9 AP 3000 and 3002 – Switch option for remote |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2191 Free Datasheet http://www.datasheet4u.net/ AP4957AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-25 |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET on Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 201012071 Data and specifications subject to change without notice AP9575AGM-HF Electrical Characteristics@Tj=25oC(unless |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET rmal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 1 201201194 AP9412AGM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) S |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET aximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 200905132 Data and specifications subject to change without notice AP9467AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Sou |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 1 Total Power Dissipation 30 V +20 V 12 A 9.8 A 60 A 2.5 W Linear Derating Factor 0.02 W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Therma |
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APTech |
1/4 INCH DIAPHRAGM VALVE – Open/closed status indication window – LOTO – integral standard feature PSIG / BAR 250 / 17 300 / 21 3,000 / 207 l l l l l l AP 3659 l AP 3657 Pneumatic valves, normally closed (NC) 125 / 9 AP 3000 and 3002 – Switch option for remote |
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APTech |
1/4 INCH DIAPHRAGM VALVE – Open/closed status indication window – LOTO – integral standard feature PSIG / BAR 250 / 17 300 / 21 3,000 / 207 l l l l l l AP 3659 l AP 3657 Pneumatic valves, normally closed (NC) 125 / 9 AP 3000 and 3002 – Switch option for remote |
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AGM |
MOSFET ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver |
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Advanced Power Electronics |
Complementary N and P-channel Enhancement-mode Power MOSFETs 30 ±20 -6.3 - 5. 0 -20 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 |
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Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W 1 201011252 Data and specifications subj |
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ETC |
LCD 2. Mechanical specifications 3. Block diagram 4. Dimensional Outline 5. Pin description 6. Maximum absolute limit 7. Electrical characteristics 8. Backlight Characteristics 9. Electro-Optical characteristics 10. Timing Characteristics 11. Control and |
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AZ Displays |
SPECIFICATIONS FOR LIQUID CRYSTAL DISPLAY 0 70 80 Vdd 7.0 9.5 Unit ºC ºC ºC ºC V V V AZ DISPLAYS, INC. 04/26/01 1 AGM1232G SERIES GRAPHIC MODULE 3.0 ELECTRICAL CHARACTERISTICS Item Input voltage (high) Input voltage (low) Symbol Vih Vil Condition H level L level 0ºC Recommended LC Drivi |
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AZ Displays |
LCD |
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AZ Displays |
LCD MODULE |
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