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AP9412AGM-HF |
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| Part Number | AP9412AGM-HF |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The SO-8 package is widely preferr... |
| Features |
rmal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 50
Unit ℃/W
Data and specifications subject to change without notice
1 201201194
AP9412AGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
Test Conditions VGS=0V, ID=250uA
2
Min. 30 1 -
Typ. 43 18 3.7 8 9 5 32 17 435 250 1
Max. Units 6 8 3... |
| Document |
 AP9412AGM-HF Data Sheet
PDF 90.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP9412AGM-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP9412AGM |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP9412AGH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP9412AGH-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP9412AGI |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|