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On-Bright Electronics |
Adaptive Multi-Mode PWM Controller OB2362 is a high performance flyback adaptive ■ Power on soft start reducing MOSFET Vds multi-mode(CCM/QR) PWM controller, optimized stress to achieve high efficiency and low standby power ■ Multi-Mode Operation with effective system cost. CCM |
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ADA ELECTRONICS |
Single-channel capacitive touch sensor ............................................................................................................ 7 8. .................................................................................................................................. 8 9 |
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On-Bright Electronics |
Adaptive Multi-Mode PWM Controller OB2633 is a highly integrated Quasi- ■ Very wide range of supply voltage Resonant(QR) controller with adaptive multi-mode regulation, optimized for high performance, low EMI, low standby power consumption and wide output voltage range Quick Charger |
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NTE Electronics |
Integrated Circuit NMOS / Asynchronous Communications Interface Adapter D 8 –Bit and 9 –Bit Transmission D Optional Even and Odd Parity D Parity, Overrun and Framing Error Checking D Programmable Control Register D Optional ÷1, ÷16, and ÷64 Clock Modes D Up to 1.0 Mbps Transmission D False Start Bit Deletion D Peripheral/ |
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STMicroelectronics |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 100˚C) 270 13.5 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Te |
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STMicroelectronics |
Upgradable Bluetooth Low Energy network processor • Bluetooth specification v4.2 compliant master and slave single-mode Bluetooth low energy network processor • Embedded Bluetooth low energy protocol stack: GAP, GATT, SM, L2CAP, LL, RF-PHY • Bluetooth low energy profiles provided separately • Operat |
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STMicroelectronics |
Constant Voltage and Constant Current Controller for Battery Chargers and Adapters Constant voltage and constant current control Low voltage operation Low external component count Current sink output stage Easy compensation 2 kV ESD protection Voltage reference: – Fixed output voltage reference 2.545 V – 0.5% and 1% v |
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STMicroelectronics |
CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER FOR BATTERY CHARGERS AND ADAPTORS er operational amplifier makes it an ideal current limiter for output low side current sensing. The current threshold is fixed, and precise. The only external components are: * a resistor bridge to be connected to the output of the power supply (adap |
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Tyco Electronics |
Cascadable Amplifier 8 "! 24 5 9 (* 0: < 7 ;8 8 ") 5 9 (* 0: < 7 ;8 8 ") $ 9 5 9 (* 0: < 7 ;8 2 ! ! ! " 7 8J 7 8$! " # ! ! " " ! " ! # $ ! ! |
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STMicroelectronics |
Adaptive synchronous rectification controller • Secondary side synchronous rectification controller optimized for LLC resonant converter • Dual gate driver for N-channel MOSFETs • Adaptive turn-off logic • Turn-on logic with adaptive masking time • Auto-compensation of parasitic inductance • Low |
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On-Bright Electronics |
Adaptive Multi-Mode PWM Controller ■ Power on soft start reducing MOSFET Vds stress ■ Multi-Mode Operation 100KHz fix frequency mode @ Full Load Valley switching operation @ Green mode Burst Mode @ Light Load & No Load ■ Frequency shuffling for EMI ■ Extended burst mode control for im |
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Tyco Electronics |
5 TO 100 MHZ TO-8 CASCADABLE AMPLIFIER max.) Max. Peak Power (3 µsec max.) “S” Series Burn-in Temperature (Case) -62° to +125°C 125°C +15 Volts +13 dBm 50 mW 0.5 W 85°C Thermal Data: Vcc = 12 Vdc Thermal Resistance θjc Transistor Power Dissipation Pd Junction Temperature Rise Above Case |
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Tyco Electronics |
10 TO 1000 MHz CASCADABLE AMPLIFIER x.) “S” Series Burn-in Temperature (Case) -62° to +125°C 125°C +17 Volts +13 dBm 50 mW 0.5 W 125°C Thermal Data: Vcc = 15 Vdc Thermal Resistance θjc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc 170°C/W 0.189 W 32°C Out |
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Tyco Electronics |
10 TO 1000 MHz CASCADABLE AMPLIFIER c max.) “S” Series Burn-in Temperature (Case) -62° to +125°C 85°C +17 Volts +15 dBm 100 mW 0.5 W 85°C Thermal Data: Vcc = 15 Vdc Thermal Resistance θjc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc 148°C/W 0.622 W 92°C |
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STMicroelectronics |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS tter 4. Base = 25 ° C) Value Unit Parameter PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 1250 25 45 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperatur |
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ST Microelectronics |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS th(j-c) Junction -Case Thermal Resistance* 0.21 °C/W * Applies only to rated RF amplifier operation: 150 microsec / 10% July 2000 1/4 AM1214-250 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol BVCBO BVCES BVEBO ICES hFE IC = 50 mA IC = 50 m |
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Tyco Electronics |
Radar Pulsed Power Transistor - 220 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Ma |
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Tyco Electronics |
10 TO 1200 MHz CASCADABLE AMPLIFIER te max.) Max. Peak Power (3 µsec max.) “S” Series Burn-in Temperature (Case) -62° to +125°C 125°C +17 Volts +10 dBm 100 mW 0.5 W 125°C Thermal Data: Vcc = 15 Vdc Thermal Resistance θjc Transistor Power Dissipation Pd Junction Temperature Rise Above |
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Tyco Electronics |
20 TO 250 MHz CASCADABLE AMPLIFIER µsec max.) “S” Series Burn-in Temperature (Case) -62° to +125°C 125°C +17 Volts +10 dBm 50 mW 0.5 W 125°C Thermal Data: Vcc = 15 Vdc Thermal Resistance θjc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc 184°C/W 0.155 W 2 |
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Tyco Electronics |
10 TO 1000 MHz CASCADABLE AMPLIFIER ) Max. Peak Power (3 µsec max.) “S” Series Burn-in Temperature (Case) -62° to +125°C 125°C +17 Volts +13 dBm 50 mW 0.5 W 125°C Thermal Data: Vcc = 15 Vdc Thermal Resistance θjc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tj |
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