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AM1214-250 |
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| Part Number | AM1214-250 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The AM1214-250 is a rugged, Class C common base device designed for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a t... |
| Features |
th(j-c) Junction -Case Thermal Resistance* 0.21 °C/W
* Applies only to rated RF amplifier operation: 150 microsec / 10%
July 2000
1/4
AM1214-250
ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC
Symbol BVCBO BVCES BVEBO ICES hFE IC = 50 mA IC = 50 mA IE = 20 mA VCE = 40 V VCE = 5 V Test Conditions IE = 0 mA VBE = 0 V IC = 0 mA VBE = 0 V IC = 0.5 A 10 Min. 70 70 3.5 10 Typ. Max. Unit V V V mA
DYNAMIC @ 150 MICROSEC / 10 %
Symbol POUT ηC GP f = 1215 - 1400 MHz f = 1215 - 1400 MHz f = 1215 - 1400 MHz Test Conditions PIN = 40 W PIN = 40 W PIN = 40 W VCC = 50 V VCC = 50 V VCC = 50 V Min. 300 40 8... |
| Document |
 AM1214-250 Data Sheet
PDF 53.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AM1214-200 |
STMicroelectronics |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
|
| 2 | AM1214-100 |
STMicroelectronics |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
|
| 3 | AM1214-175 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 4 | AM1214-300 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 5 | AM1214-300 |
ASI |
NPN SILICON RF POWER TRANSISTOR |
|