IGBT Module-Dual □ : CIRCUIT 150 A,600V □ : OUTLINE DRAWING QS043-402-20398(2/5) PDMB150E6 PDMB150E6C (C2E1) 1 (E2) 2 7(G2) 6(E2) (C1) 3 5(E1) 4(G1) 48.0 16.0 14.0 94.0 80 ±0.25 12.0 11.0 12.0 11.0 12.0 123 2-Ø6.5 7 6 4 18.0 4 5 4 3-M5 23.0 23.0 17.0 14 9 14 9 14 4-fasten tab #110 t=0.5 94 80 ± 0.25 12 11 12 11 12 12 3 2-Ø 5.5 7 6 1.
2,500 3(30.6) PDMB150E6C 2(20.4) V(RMS) Nm (kgf・cm) □ : ELECTRICAL CHARACTERISTICS (TC=25℃) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Symbol Test Condition ICES VCE= 600V, VGE= 0V IGES VGE= ±20V,VCE= 0V Min. - Typ. - Max. Unit 1.0 mA - - 1.0 μA Collector-Emitter Saturation Voltage VCE(sat) IC= 150A,VGE= 15V - 2.1 2.6 V Gate-Emitter Threshold Voltage VGE(th) VCE= 5V,IC= 150mA 4.0 - 8.0 V Input Capacitance Switching Time Rise Time Turn-on Time Fall Time Turn-off Time Cies tr ton tf toff VCE= 10V,VGE= 0V,f= 1MHZ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | pdmb150e6c |
Nihon Inter Electronics |
IGBT | |
2 | PDMB150A6 |
Nihon Inter Electronics Corporation |
IGBT | |
3 | PDMB150B12 |
Nihon Inter Electronics Corporation |
IGBT | |
4 | PDMB150B12C |
Nihon Inter Electronics Corporation |
IGBT | |
5 | PDMB150B12C2 |
Nihon Inter Electronics Corporation |
IGBT | |
6 | PDMB150BS12 |
Nihon Inter Electronics Corporation |
IGBT | |
7 | PDMB100A6 |
Nihon Inter Electronics Corporation |
IGBT | |
8 | PDMB100B12 |
Nihon Inter Electronics Corporation |
IGBT | |
9 | PDMB100B12C |
Nihon Inter Electronics Corporation |
IGBT | |
10 | PDMB100B12C2 |
Nihon Inter Electronics Corporation |
IGBT | |
11 | PDMB100BS12 |
Nihon Inter Electronics Corporation |
IGBT | |
12 | PDMB100BS12C |
Nihon Inter Electronics Corporation |
IGBT |