PDMB100B12C2 - Nihon Inter Electronics Corporation

PDMB100B12C2 IGBT

IGBT MODULE Dual 100A 1200V CIRCUIT PDMB100B12C2 OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Approximate Weight : 220g Symbol VCES VGES IC IC PC Tj Tstg VISO FTOR PDMB100B12C2 1200 +/ - 20 100 200 500 -40 to +150 -40 to +125 2500 2.04 Unit V.

Features

IC=100mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 6 ohm RG=10 ohm VGE= +/- 15V Min. 4.0 - Max. 2.0 1.0 2.4 8.0 0.45 0.7 0.35 1.10 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 100 200 Unit A Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=100A,VGE=0V IF=100A,VGE=-10V,di/dt=200A/µs Min. - Typ. 1.9 0.2 Max. 2.4 0.3 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - T.