PDMB150A6 - Nihon Inter Electronics Corporation

PDMB150A6 IGBT

IGBT MODULE CIRCUIT Dual 150A 600V PDMB150A6 OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 430g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PDMB150A6 600 +/ - 20 150 300 560 -40 to +150 -40 to +125 2500 2 2 Unit V V A W.

Features

V RL= 2 ohm RG= 5.1 ohm VGE= +/- 15V Min. 4.0 - Typ. 2.1 15,000 0.15 0.25 0.2 0.45 Max. 2.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 150 300 Unit A Typ. 1.9 0.15 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=150A,VGE=0V IF=150A,VGE=-10V,di/dt=150A/µs Min. - Max. 2.4 0.25 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ.