ZVP2110G - Zetex Semiconductors

ZVP2110G P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω 7 ZVP2110G D COMPLEMENTARY TYPE – ZVN2110G PARTMARKING DETAIL – ZVP2110 G D S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Ope.

Features

* 100 Volt VDS
* RDS(on)=8Ω 7 ZVP2110G D COMPLEMENTARY TYPE – ZVN2110G PARTMARKING DETAIL – ZVP2110 G D S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -100 -310 -3 ± 20 UNIT V mA A V W °C 2 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Curren.