ZVP2106G - Zetex Semiconductors

ZVP2106G P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 96 FEATURES * 60 Volt VDS * RDS(on)=5Ω PARTMARKING DETAIL: COMPLEMENTARY TYPE: ZVP2106 ZVN2106G ZVP2106G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating.

Features

* 60 Volt VDS
* RDS(on)=5Ω PARTMARKING DETAIL: COMPLEMENTARY TYPE: ZVP2106 ZVN2106G ZVP2106G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -1 5 150 100 60 20 7 15 12 15 -60 -1.5 -3.5 20 -0.5 -100 SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -.