ZVP2106B - Seme LAB

ZVP2106B P CHANNEL ENHANCEMENT MODE DMOS FET

ZVP2106B MECHANICAL DATA Dimensions in mm (inches) P CHANNEL ENHANCEMENT MODE DMOS FET BVDSS ID(cont) RDS(on) - 60V 0.76A 0.5Ω 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. FEATURES 2.54 (0.100) • FAST SWITCHING SPEEDS • NO SECONDARY B.

Features

2.54 (0.100)
• FAST SWITCHING SPEEDS
• NO SECONDARY BREAKDOWN
• EXCELLENT TEMPERATURE STABILITY 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 45°
• HIGH INPUT IMPEDANCE
• LOW CURRENT DRIVE TO39 Pin 1
  – Source Pin 2
  – Gate Pin 3
  – Drain
• EASE OF PARALLELING ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) VGS VDS ID ID IDM PD PD TJ , Tstg Gate
  – Source Voltage Drain
  – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Power Dissipation @ TA = 25°C Power Dissipation @ TC = 25°C Operating and Storage Temperature Range (VGS = 10.