Y2010DN - Fairchild Semiconductor

Y2010DN Schottky Barrier Rectifier

FYP2010DN — Schottky Barrier Rectifier FYP2010DN Schottky Barrier Rectifier Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection August 2009 1.Anode 3.Anode 2. Cathode 123 TO-220 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) IFSM Maxim.

Features

• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection August 2009 1.Anode 3.Anode 2. Cathode 123 TO-220 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) IFSM Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics Symbol Parameter RθJC Maximum Thermal Resistance, Junction to .