XN4506 - Panasonic Semiconductor

XN4506 NPN epitaxial planer transistor

Composite Transistors XN4506 NPN epitaxial planer transistor Unit: mm For amplification of low frequency output 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SD1915(F) ×.

Features

0.5
  –0.05 +0.1 +0.1 Unit V µA µA 0.1 0.1 500 2500 0.1 0.6 80 7 1.0 V V MHz pF Ω Ron test circuit IB=1mA VB VV VA f=1kHz V=0.3V Ron= VB !1000(Ω) VA
  –VB 1 Composite Transistors PT — Ta 500 XN4506 IC — VCE 24 Ta=25˚C 120 VCE=2V 100 25˚C IC — VBE Total power dissipation PT (mW) Collector current IC (mA) IB=10µA 16 8µA 12 6µA 4µA Collector current IC (mA) 400 20 80 Ta=75˚C 300
  –25˚C 60 200 8 40 100 4 2µA 20 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V.